6H SIC Wafer

6H SiC Wafer

Semi-insulating and N-type 6H-SiC substrates designed for RF devices, high-temperature sensors and specialty power electronics. Epi-ready polishes, tight flat/notch geometry per SEMI M55, and traceable defectivity control.

6H SIC Crystal Structure Overview

The 6H-SiC (Silicon Carbide) crystal structure is a hexagonal wurtzite-type lattice, characterized by the stacking sequence AaBβCγAaCγBβ. This arrangement consists of: 2/3 cubic (sp³) bonds and 1/3 hexagonal bonds, Fixed relative positions of carbon (C) atoms with respect to silicon (Si) atoms, ensuring structural stability.

The figure below illustrates this atomic configuration.

FEATURES & BENEFITS

APPLICATIONS AREAS

6H SIC Wafer Properties

PropertySingle Crystal 6H
Lattice Parametersa = 3.073 Å, c = 15.117 Å
Crystal SequenceABCACB
Band Gap3.03 eV
Density3.21 × 10³ kg/m³
Thermal Expansion Coefficient4-5×10⁻⁶ /K
Refractive Indexno = 2.707, ne = 2.755
Dielectric Constant9.66
Thermal Conductivity490 W/mK
Breakdown Electric Field2-4 × 10⁸ V/m
Sound Wave Propagation Speed2.0 × 10⁵ m/s
Electron Mobility400 cm²/V·s
Hole Mobility90 cm²/V·s
Mohs Hardness~9

6H Silicon Carbide Specification

ModelNameDiameterThickness
AT-SIC-JP001NConductive Silicon Carbide Wafer2 inches0.35 mm
AT-SIC-JP002NConductive Silicon Carbide Wafer3 inches0.35 mm
AT-SIC-JP003NConductive Silicon Carbide Wafer4 inches0.35 mm
AT-SIC-JP004NConductive Silicon Carbide Wafer6 inches0.35 mm
AT-SIC-JP005NConductive Silicon Carbide Wafer2 inches0.5 mm
AT-SIC-JP006NConductive Silicon Carbide Wafer3 inches0.5 mm
AT-SIC-JP007NConductive Silicon Carbide Wafer4 inches0.5 mm
AT-SIC-JP008NConductive Silicon Carbide Wafer6 inches0.5 mm
AT-SIC-JP005Semi-Insulating Silicon Carbide Wafer2 inches0.35 mm
AT-SIC-JP006Semi-Insulating Silicon Carbide Wafer3 inches0.35 mm
AT-SIC-JP007Semi-Insulating Silicon Carbide Wafer4 inches0.35 mm
AT-SIC-JP008Semi-Insulating Silicon Carbide Wafer6 inches0.35 mm
AT-SIC-JP009Semi-Insulating Silicon Carbide Wafer2 inches0.5 mm
AT-SIC-JP010Semi-Insulating Silicon Carbide Wafer3 inches0.5 mm
AT-SIC-JP011Semi-Insulating Silicon Carbide Wafer4 inches0.5 mm
AT-SIC-JP012Semi-Insulating Silicon Carbide Wafer6 inches0.5 mm

Specifications of 6H SIC Wafer Packaging Box

NameModelWafer Size Capacity
Wafer Single Piece Box1 inchApproximately 25mm diameter wafer
2 inch Approximately 50mm diameter wafer
3 inchApproximately 76mm diameter wafer
4 inchApproximately 100mm diameter wafer
6 inchApproximately 150mm diameter wafer
8 inchApproximately 200mm diameter wafer
wafer single piece box

Custom 6H Silicon Carbide Wafers

Zirsec offers full customization of 6H Silicon Carbide wafers to meet your specific needs. Our team works closely with you to deliver the exact specifications required for your application.

Diameter

Available in 2 inches, 3 inches, 4 inches, and 6 inches. Custom sizes available upon request.

Thickness

Standard thickness: 0.35 mm, 0.5 mm. Other thicknesses are available.

Doping Type

Conductive (N-type, P-type) ;Semi-Insulating.

Polishing and Surface Quality

High-quality polished wafers with minimal defects for optimal performance.

Crystal Orientation

Customized crystal orientation options, including specific alignment to suit your application.

FAQ

1) Why choose 6H over 4H?
6H-SiC has been used historically in RF and high-temp niches; some device designs and process IP are tuned to 6H. For mainstream power electronics, 4H is usually preferred due to mobility/breakdown advantages.

Semi-insulating wafers are typically on-axis for SI device work; N-type epi substrates are commonly 4° off 〈11-20〉 to suppress polytype inclusions and aid step-flow epitaxy.

N-type around 350 μm; semi-insulating around 500 μm for 3–4″.

Prime lots target ≤1–5 cm⁻²; research grades may be higher. We grade per lot and provide maps.

Si-face CMP epi-ready with Ra < 0.5 nm; TTV ≤ 15 μm typical for 3–4″.
Dimensions follow SEMI M55; defect nomenclature per SEMI M81 guide.
Yes, with notch per SEMI. Availability and lead time depend on grade; 200 mm is roadmap/on-request.
Reported values show 4H slightly higher than 6H in many directions; final device stack dominates heat path.

Yes. Backside laser marking and single-wafer cassettes as standard.

We can coordinate epitaxy with qualified partners for your device stack; share layer targets and doping.

Customization

From design to reverse engineering, we provide free technical consulting to help upgrade your equipment. We specialize in high-precision complex parts with ±0.01mm tolerances and special coatings like acid and oxidation resistance, tailored for demanding industrial applications.

FAQ

Zirsec offers a wide range of SiC components including tubes, beams, plates, crucibles, rollers, sealing rings, and custom mechanical parts for industrial, chemical, and semiconductor applications.

Yes. We support OEM and customized production based on your drawings, specifications, or working conditions.

Yes, sample orders are available for standard items. For custom-made components, small batch samples can be produced after design confirmation.

Simply fill out the contact form on this page with product type, quantity, and specifications. Our sales engineer will send you a detailed quotation within 24 hours.

Absolutely. Our engineers provide material selection guidance, structural optimization, and technical support for your specific applications.

All products undergo strict inspection procedures, including dimensional accuracy, density, strength, and corrosion resistance tests before delivery.

Tell us your requirements

Our technical engineer will reply with a custom solution and quotation within one working day.

滚动至顶部

Contact Information

Address

No. 88 Changshan Industrial Park, Zouping, Shandong, China

Email

info@zirsec.com

Whatsapp

+86 19311583352

Tel

+86 0731-74427743

Write for us

Please fill out the form with your contact details or give us a call, and we will get back to you within 24 hours.

We respect your privacy. No spam, ever.
Silicon Carbide Tube

Download Zirsec’s Silicon Carbide Product Catalog.

Full specifications, applications, and technical data in one file.

We respect your privacy. No spam, ever.